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 3 www.fairchildsemi.com FFPF08S60S — STEALTH? II Diode Typical Performance Characteristics TC = 25°C unless otherwise noted Figure 3. Typical Forward Voltage Drop Figure 5. Typical Junction Capacitance Figure 6. Typical Reverse Recovery Time Figure 7. Typical Reverse Recovery Current Figure 8. Forward Current Deration C urve 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.1 1 10 100 TC=75oC TC=25oC F O RW ARD CURRENT, I F [A] FORWARD VOLTAGE, VF [V] TC=125oC 0 100 200 300 400 500 600 1E-9 1E-8 1E-7 1E-6 1E-5 Figure 4. Typical Reverse Current 1E-4 TC = 25 oC TC = 75 oC REVERSE CURRENT, I R [A] REVERSE VOLTAGE, VR [V] TC = 125 oC 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 JUNCTION CAPACITANCE, C J [pF] REVERSE VOLTAGE, VR [V] f = 1MHz 100 200 300 400 500 0 10 20 30 40 50 60 70 80 90 100 TC = 125 oC TC = 75 oC REVERSE RECOVERY TIME, trr [ns] diF/dt [ A/μs] TC = 25 oC IF = 8A 100 200 300 400 500 0 1 2 3 4 5 6 7 8 9 10 TC = 25 oC TC = 75 oC REVERSE RECOVERY CURRENT, Irr [A] diF/dt [A/μs] TC = 125 oC IF =8A 70 80 90 100 110 120 130 140 150 0 1 2 3 4 5 6 7 8 9 10 11 12 AVERAGE FORWARD CURRENT, I F(AV) [A] CASE TEMPERATURE, TC [ oC] DC ?2007 Fairchild Semiconductor Cor poration FFPF08S60S Rev. C1 |